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Creators/Authors contains: "Sandhu, Arvinder"

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  1. ; ; ; ; ; (, Physical Review A)
  2. ; ; ; ; ; ; ; (, Optics Continuum)
    While industrial-grade Yb-based amplifiers have become very prevalent, their limited gain bandwidth has created a large demand for robust spectral broadening techniques that allow for few-cycle pulse compression. In this work, we perform a comparative study between several atomic and molecular gases as media for spectral broadening in a hollow-core fiber geometry. Exploiting nonlinearities such as self-phase modulation, self-steepening, and stimulated Raman scattering, we explore the extent of spectral broadening and its dependence on gas pressure, the critical power for self-focusing, and the optimal regime for few-cycle pulse compression. Using a 3-mJ, 200-fs input laser pulses, we achieve 17 fs, few-cycle pulses with 80% fiber energy transmission efficiency. The optimal parameters can be scaled for higher or lower input pulse energies with appropriate gas parameters and fiber geometry. 
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  3. ; ; ; ; (, Physical Review A)
  4. ; ; ; ; ; ; ; (, Journal of Physics: Materials)
  5. ; ; ; ; ; ; (, physica status solidi (RRL) – Rapid Research Letters)
    Using hexagonal boron nitride (hBN) as a substrate for graphene has shown faster carrier cooling which makes it ideal for high‐power graphene‐based devices. However, the effect of using boron‐isotope‐enriched hBN has not been explored. Herein, femtosecond pump‐probe spectroscopy is utilized to measure and compare the time dynamics of photo‐excited carriers in graphene‐hBN heterostructures for hBN with the natural distribution of boron isotopes (20%10B and 80%11B) and hBN enriched to 100%10B and11B. The carriers cool down faster for systems with isotopically pure hBN substrates by a factor of ≈1.7 times. This difference in relaxation times arises from the interfacial coupling between carriers in graphene and the hBN phonon modes. The results show that the boron isotopic purity of the hBN substrate can help to reduce the hot phonon bottleneck that limits the cooling in graphene devices. 
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